ddr phy basicsddr phy basics

63 0 obj /Parent 10 0 R Join Teledyne LeCroy for this 4-part DDR Memory Master Class to learn about the basics of DDR testing with oscilloscopes, including common test preparation and challenges, the difference between compliance and debug test tools, and practical tips and techniques to increase your DDR . /Type /Page /Parent 8 0 R /MediaBox [0 0 612 792] <> /MediaBox [0 0 612 792] 61 0 obj /Kids [53 0 R 54 0 R 55 0 R 56 0 R 57 0 R 58 0 R 59 0 R 60 0 R 61 0 R 62 0 R] Rambus, DDR/2 Future Trends. Like the command bus, the address bus is single-clocked. 30 0 obj $O./ 'z8WG x 0YA@$/7z HeOOT _lN:K"N3"$F/JPrb[}Qd[Sl1x{#bG\NoX3I[ql2 $8xtr p/8pCfq.Knjm{r28?. 0000002782 00000 n /Rotate 90 @QB&iY( What a DDR4 SDRAM looks like on the inside, What goes on during basic operations such as READ & WRITE, and, A high-level picture of the SDRAM sub-system, i.e., what your ASIC/FPGA needs in order to talk to a DDR4 SDRAM memory. High level introduction to SDRAM technology and DDR interface technology. << endobj The DDR command bus consists of several signals that control the operation of the DDR interface. endobj /Resources 108 0 R Figure 2: Common clock, command, and address lines link DRAM chips and controller. /Type /Page /Contents [190 0 R 191 0 R] << DDR4 DRAMs contain four 8-bit programmable registers called MPR registers that are used for DQ bit training (i.e., Read and Write Centering). what is the internal architecture of a basic DDR PHY? Delay-Locked-Loop (DLL) type and frequency. /MediaBox [0 0 612 792] /Parent 3 0 R endobj The controller is responsible for initialization, data movement, conversion and bandwidth management. /Resources 102 0 R . >> /Contents [109 0 R 110 0 R] 17 0 obj >> Get Notified when a new article is published! endobj This address provided by you, the user, is typically called "logical address". Calibration and Report Generation, 13.2.3. /Rotate 90 Say you need 16Gb of memory. /CropBox [0 0 612 792] <> endobj Read Data Buffer and Write Data Buffer, 5.3.5. /CropBox [0 0 612 792] Enabling periodic calibration is optional because if you know your device will be deployed in stable temperature conditions, then the initial ZQ calibration and read/write training is sufficient. /Parent 6 0 R In write-leveling mode, when the DRAM sees a DataStrobe (DQS), it uses it to sample the Clock (CK) and return the sampled value back to the controller through the DQ bus. Stage 1: Read Calibration Part OneDQS Enable Calibration and DQ/DQS Centering, 1.17.5. , DDR4 SDRAM - Initialization, Training and Calibration, CWL is the time delay between the column address and data at the inputs of a DRAM, Read/Write Training (a.k.a Memory Training or Initial Calibration), Runs algorithms to align clock [CK] and data strobe [DQS] at the DRAM, Runs algorithms and figures out the correct read and write delays to the DRAM, Reports errors if the signal integrity is bad and data cannot be written or read reliably. DDR PHY Training Making Sense Of DRAM Whiteboard Wednesday - Introducing the DFI 5.0 Interface Standard Microchip Technology How to make Laravel whereIn not sorted automatically 3 views DDR. DDR use in SoC LP, PC DDR's DDR PHY basics Architecture Sub components DDR Controller concepts. Basics PHYSICAL ORGANIZATION . Read and write operations are a 2-step process. >> /Type /Page <> Input your search keywords and press Enter. /Rotate 90 When you enable write-leveling in the controller, it does the following steps: The figure below shows the write-leveling concept. >> Reading data into the Sense Amplifiers is equivalent to opening/pulling out the file drawer. I'm constantly referring to something called "commands" - ACTIVATE command, PRECHARGE command, READ command, WRITE command. 11 0 obj /Parent 10 0 R 40 0 obj Single-data-rate to double-data-rate conversion. >> Stage 3: Write Calibration Part TwoDQ/DQS Centering, 1.17.7. >> Basics Read Timing for Conventional DRAM Row Address Column Valid Dataout RAS CAS Address DQ Row Address Column Valid . <> endobj Basic I/O Pads I/O Channels - Transmission Lines - Noise and Interference High-Speed I/O - Transmitters -Receivers Clock Recovery - Source-Synchronous . /Parent 3 0 R This information originally appeared on the Teledyne LeCroy Test Happens Blog. 30 0 obj It begins with the ACTIVATE Command (ACT_n & CS_n are made LOW for a clock cycle), which is then followed by a RD or WR command. If you would like to be notified when a new article is published, please sign up. Three types of SSTL1.8V I/O, optimized for DDR2. Functional Description Intel MAX 10 EMIF IP, 3. See Intels Global Human Rights Principles. << /Rotate 90 David Maliniak joined Teledyne LeCroy in 2012 after more than 30 years as a writer/editor in the electronics B2B press, most of which was spent at Electronic Design covering EDA and T&M. Generate an accurate Netlist, including parasitic values and input loads for the SPICE simulator. >> /Resources 99 0 R Book Review: Bogatin's Practical Guide to Transmission Line Design and Characterization for Signal Integrity Applications, Ranatec Introduces USB 3.2 Feedthru Filter Featuring Benchmark 20 Gbps Data and 100 W Power, HVD3220 High Voltage Differential Probe From Teledyne LeCroy, Passive Plus, Inc. Address widthcan be 12 to 15 address signals. Figure 3: The timing relationship between the DDR strobe and data signals is different for reads and writes. News the global electronics community can trust, The trusted news source for power-conscious design engineers, News for Electronics Purchasing and the Supply Chain, The can't-miss forum engineers and hobbyists, News, technologies, and trends in the electronics industry, Product news that empowers design decisions, Design engineer' search engine for electronic components, The electronic components resource for engineers and purchasers, The design site for hardware software, and firmware engineers, Where makers and hobbyists share projects, The design site for electronics engineers and engineering managers, The learning center for future and novice engineers, The educational resource for the global engineering community, Where electronics engineers discover the latest toolsThe design site for hardware software, and firmware engineers, Brings you all the tools to tackle projects big and small - combining real-world components with online collaboration. >> /Resources 210 0 R You must have JavaScript enabled to enjoy a limited number of articles over the next 2 days. The table above is only a subset of commands you can issue to the DRAM. This step is also called RAS - Row Address Strobe. 8 0 obj When a ZQCL command is issued during initialization, this DQ calibration control block is enabled and an internal comparator within the DQ calibration control block tunes the p-channel devices using VOH[0:4] until the voltage is exactly VDDq/2 (A classic resistor divider). endobj >> /Contents [181 0 R 182 0 R] Sign up for Signal Integrity Journal Newsletters. Debugging HPS SDRAM in the Preloader, 4.15. /Contents [229 0 R 230 0 R] Ck!@VY@0GT,iY Gc7ie8NrIucYB6(%,L\G >> >> /CropBox [0 0 612 792] endobj /CropBox [0 0 612 792] Then you could pick a single 8Gb x8 device or two 4Gb x4 devices and connect them in a "width cascaded" fashion on the PCB. Creating a Top-Level File and Adding Constraints, 4.14.1. << So, to simplify things, you can say that DRAMs are classified based on the width of the DQ bus. DFI Group Releases Initial Version of the DFI 5.0 Specification for High-Speed Memory Controller and PHY Interface. When the edges of the eye are detected, the read delay registers are set appropriately to ensure the data is captured at the eye center. xMo@H9.Q]KQ&NV&zz xm@wf!C.6;378? /Contents [208 0 R 209 0 R] /Parent 6 0 R Stage 2: Write Calibration Part One, 1.17.6. Modifying the Pin Assignment Script for QDRII and RLDRAMII, 1.13.3.2. <> 17 0 obj /Resources 171 0 R endobj /Count 3 PRECHARGE is equivalent to closing the current file drawer in the cabinet, it causes the data in the Sense Amps to be written back into the row. It includes in it both the high speed and low power modules which helps in achieving power efficiency. endobj << /CropBox [0 0 612 792] endobj 56 0 obj /Contents [91 0 R 92 0 R] 38 0 obj <> << /Parent 7 0 R >> In this case you'll have a single DRAM chip soldered on the board but internally within the package it'll have a stack of 2 dies. The bit values on the bus determine the bank, row, and column being written or read. Functional cookies help to perform certain functionalities like sharing the content of the website on social media platforms, collect feedbacks, and other third-party features. endobj Sreenivas, Founder, VLSI Guru. /Contents [184 0 R 185 0 R] /MediaBox [0 0 612 792] 41 0 obj /Resources 174 0 R /Resources 231 0 R DDR4 basics in FPGA point of view. DDR PHY External Memory Interface Handbook Volume 3: Reference Material: For UniPHY-based Device Families View More Document Table of Contents Document Table of Contents x 1. This video covers the steps the DDR-PHY sequences. /MediaBox [0 0 612 792] /Rotate 90 So, from the ASIC/Processor's point of view each DRAM memory on the DIMM is located at a different distance. 4 0 obj /Rotate 90 The DDR PHY Interface (DFI) specification defines an interface protocol between memory controller logic and PHY interfaces, with a goal of . Functional DescriptionHPS Memory Controller, 5. endobj 13K views 2 years ago PolarFire FPGA Microchip's DDR-PHY is an integral part of the PolarFIre FPGA and Polarfire SOC memory subsystem. /Parent 10 0 R /Type /Page /MediaBox [0 0 612 792] /Parent 6 0 R endobj /Rotate 90 Or put it another way, it is the number of bits loaded into the Sense Amps when a row is activated. This interface between the PHY and memory is specified in the JEDEC standard. The physical implementation of the DDR2 Interface is divided into two levels. All contents are Copyright 2023 by AspenCore, Inc. All Rights Reserved. DDR2, DDR3, and LPDDR2 Resource Utilization in Arria V Devices, 10.7.2. Upgrading to UniPHY-based Controllers from ALTMEMPHY-based Controllers, 1.16. /MediaBox [0 0 612 792] 35 0 obj Sign in here. Since the column address is 10 bits wide, there are 1K bit-lines per row. Here's a super-simplified version of what the controller does. Memory device initializationthe DDR PHY performs the mode register write operations to initialize the devices. << Creating a Project in Platform Designer (Standard), 4.13.4.2. tDQSS is the position of the DataStrobe (DQS) relative to Clock (CK). stream /Type /Page Avalon -MM Slave Read and Write Interfaces, 9.1.4. /Resources 105 0 R /CropBox [0 0 612 792] /CropBox [0 0 612 792] 22 0 obj SDRAM Controller Address Map and Register Definitions, 4.6.4.9. /Type /Page To keep the signal integrity and data access reliable, some of the parameters that were trained during initialization and read/write training have to be re-run. /Type /Page 16 0 obj DFI is an interface protocol that defines signals, timing, and programmable parameters required to transfer control information and data to and from the DRAM devices, and between MC (Micro Controller) and PHY. Thanks much. Build data structure of all pin locations and metal layers they connect. The tight timing requirement imposed by the DDR2 protocol. >> /Type /Pages Figure 8 shows the timing diagram of a READ operation with burst length of 8 (BL8). << The termination can be controlled using a combination of RTT_NOM, RTT_WR & RTT_PARK in mode registers MR1, 2 & 5 respectively. Since the capacitor discharges over time, the information eventually fades unless the capacitor is periodically REFRESHed. Fig. endobj /MediaBox [0 0 612 792] Having a bank of parallel 240 resistors allows you to tune the drive strength (for READs) and termination resistance (for WRITEs). /MediaBox [0 0 612 792] /MediaBox [0 0 612 792] /Rotate 90 The memory controller (or PHY). Special thanks to the representatives from the above companies who have participated, and continue to contribute to the success of this effort. /MediaBox [0 0 612 792] >> 45 0 obj /MediaBox [0 0 612 792] /Resources 201 0 R 58 0 obj /MediaBox [0 0 612 792] endobj Regardless of the size of the DRAM, it always has only 10 column bits A0 to A9. Using the Efficiency Monitor and Protocol Checker, 1.16.5. There's a lot going on in the picture above, so lets break it down: . /Metadata 2 0 R uuid:af0d40d4-6f44-418e-88c9-31ea0885e9d9 These cookies track visitors across websites and collect information to provide customized ads. /Type /Pages /PageLabels 4 0 R <> /Parent 11 0 R It is true that DDR1 and DDR2 RAM are no longer in use, and in fact, DDR1 memory is long gone. /Contents [121 0 R 122 0 R] << "Interconnect Tech of the Year" at DesignCon 2007: Report an Issue | /Parent 8 0 R Find the IoT board youve been searching for using this interactive solution space to help you visualize the product selection process and showcase important trade-off decisions. This puts the DRAM into write-leveling mode. /MediaBox [0 0 612 792] /Rotate 90 Avalon CSR Slave and JTAG Memory Map, 1.17.4. /CropBox [0 0 612 792] DFI Specification 1.0, 2.0, 2.1, 3.0, 3.1 4.0 5.0, 5.1. DDR2 and DDR3 Resource Utilization in Arria V GZ and Stratix V Devices, 10.7.6. 47 0 obj Read gate and data << <> Physical bank sizes up to 4GB, total memory up to 16GB per Typically, the memory controller or PHY allow you to set a timer and enable periodic calibration through their registers. To better understand the following sections, let's assume you have a system which looks like this - An ASIC/FPGA/Processor with 1 DIMM module. The physical address is made up of the following fields: these individual fields are then used to identify the exact location in the memory to read-from or write-to. Due to the interface's bi-directional nature, data is transferred between the memory and controller in bursts. DDR Training. Out of these, the cookies that are categorized as necessary are stored on your browser as they are essential for the working of basic functionalities of the website. The VrefDQ can be set using mode registers MR6 and it needs to be set correctly by the memory controller during the VrefDQ calibration phase. << A DDR Controller Figure 10: DRAM Sub-System. /Resources 165 0 R Nios II-based Sequencer SCC Manager, 1.7.1.4. /Contents [115 0 R 116 0 R] The DDR3 PHY IP provides the Industry standard DDR PHY Interface (DFI) bus at the local side to interface with the Memory . endobj )L^6 g,qm"[Z[Z~Q7%" As the name says Double Data Rate, DDR is the class of memory which transfers data on both the rising and falling edge of clock signal to double data rate without increase in frequency of clock. endobj <> endobj /Parent 9 0 R /Resources 117 0 R ( M6x'FH"o&nNk$rj;zh|+'h=JnbV&nH\Q \_8IGl~Yme@yFaZx(bfQ&Ntvw_^|]X%HT(+ ZH When this mode is enabled READs and WRITEs issued to the DRAM are diverted to the Multi Purpose Register instead of the memory banks. MOSYS FCRAM VCDRAM $ Modifications Targeting Latency Targeting Throughput Targeting Throughput /Parent 8 0 R /MediaBox [0 0 612 792] Because these lines control the interface's operation, they are unidirectional between the controller and the memory ICs. /Contents [118 0 R 119 0 R] Nios II-based Sequencer PHY Manager, 1.7.1.6. /Resources 123 0 R /CropBox [0 0 612 792] All address & control signals are sampled at the crossing of posedge of CK_t & negedge of CK_n. looks at the value of the DQ bit that is returned by the DRAM, either increments or decrements the DQS delay and, launches the next set of DQS pulses after some time, The DRAM once again samples CK and returns the sampled value through DQ bus. >> 0000001386 00000 n <> 6 0 obj stream During write centering the PHY does the following WRITE-READ-SHIFT-COMPARE loop continuously. The Lattice Double Data Rate (DDR3) Physical Interface (PHY) IP is a general-purpose IP that provides connectivity between a DDR3 memory Controller (MC) and the DDR3 memory devices compliant with JESD79-3 specification. << endstream 10 0 obj The width of a colum is standard - it is either 4 bits, 8 bits or 16 bits wide and DRAMs are classified as x4, x8 or x16 based on this column width. /CropBox [0 0 612 792] 186 12 << This was done to improve signal integrity at high speeds and to save IO power. /Contents [139 0 R 140 0 R] /MediaBox [0 0 612 792] >> 11 0 obj In this case the 2 devices will be connected to the same address and data busses, but you will need 2 ChipSelects to separately address each device. The specification is designed to be used by developers of both memory controllers and PHY designs, but does not place any restrictions on the how the memory controller interfaces to the system design, or how the PHY interfaces to the DRAM devices. << There are number of p-channel devices that are connected in parallel to this poly-resistor so that it can be tuned exactly to 240. 197 0 obj <>stream /Contents [163 0 R 164 0 R] Nios II-based Sequencer RW Manager, 1.7.1.5. 2009-07-08T19:39:57-07:00 Another thing to note is that, the width of DQ data bus is same as the column width. Functional Description Intel MAX 10 EMIF IP 3. Whats All This About Unbounded Jitter, Anyway? /Contents [211 0 R 212 0 R] This is called the "Word Line" and activating it reads data from the memory array into something called "Sense Amplifiers". 28 0 obj endobj Figure 1: A representative test setup for physical-layer DDR testing. /Contents [142 0 R 143 0 R] xV[oJ~06#R "(4qJPr!C7g/_)k$U. 4 0 obj /Rotate 90 endobj /MediaBox [0 0 612 792] David Maliniak joined Teledyne LeCroy in 2012 after more than 30 years as a writer/editor in the electronics B2B press, most of which was spent at Electronic Design covering EDA and T&M. It requires every engineer working on SoC to be well versed with DDR protocol concepts including DDR controller, DDR PHY, DDR memory, etc. endobj << %PDF-1.4 /Contents [226 0 R 227 0 R] 21 0 obj Since the Clock to Data/DataStrobe skew is different for each DRAM on the DIMM, the memory controller needs to train itself so that it can compensate for this skew and maintain tDQSS at the input of each DRAM on the DIMM. Using this dat,a the DQ is centered to the DQS for writes. /Kids [33 0 R 34 0 R 35 0 R 36 0 R 37 0 R 38 0 R 39 0 R 40 0 R 41 0 R 42 0 R] /Contents [100 0 R 101 0 R] /Parent 6 0 R /Rotate 90 Identify all cells that belong to the same clock and for which a zero skew is required. DDR PHY supports an ongoing measurement process, to determine what is the time delay of the basic delay element. >> Read and write operations are a 2-step process. :~VMkS&+7,`hl hY`yBYUM\}kF_*uZJU6y.Q. /Parent 7 0 R The DFI specification allows SoC designers to separate the design of the (LP)DDR controller, which typically converts system commands into (LP)DDR commands, and the (LP)DDR PHY, which typically converts the digital domain on the SoC to the analog domain of the host to device interface. %PDF-1.4 % /Rotate 90 >> /Rotate 90 Determining the Failing Calibration Stage for a Cyclone V or Arria V HPS SDRAM Controller, 13.6.4. This is distinct from protocol-layer testing, which determines whether the controller and memory chips are communicating properly at the digital level and above. k?^;vGq-;\H05&I|V=RH5/paY JR? /Rotate 90 /Type /Page The top-level picture shows what a DRAM looks like on the outside. /Contents [85 0 R 86 0 R] 2 DRAM Main Memory Main memory is stored in DRAM cells that have much higher storage density DRAM cells lose their state over time -must be refreshed periodically, hence the name Dynamic Functional DescriptionRLDRAM 3 PHY-Only IP, 9. The controller then sends a series of DQS pulses. When a ZQCL command is issued during initialization, this DQ calibration control block gets enabled and it produces a tuning value. Take another look at the left-hand side of Figure 9, the receiver is essentially a voltage divider circuit. endstream 2 0 obj /CropBox [0 0 612 792] 26 0 obj >> << /Contents [169 0 R 170 0 R] LPDDR5 Workshop Agenda Architecture Outline LPDDR4 vs. LPDDR5 Comparison Bank Operations Pin Configuration Refresh Operation Latency variations endobj << k[D8 H)l\*n/[_aF!B So how are these commands issued? Number of CS, WE, ODTin order to support rank topology and multipoint ordering. [ 11 0 R] 2009-07-08T19:39:57-07:00 J;NFx . /Contents [148 0 R 149 0 R] 186 0 obj <> endobj The table below has little more detail about each of them. This webinar was originally held on February 11, 2021. Execute a Tcl command that force all pins location, example force plan pin. SiliconExpert provides engineers with the data and insight they need to remove risk from the supply chain. <> To that end, the strobe (DQS) signal is a differential "bursted clock" that only functions during read and write operations. This concept of DRAM Width is very important, so let me explain it once more a little differently. 0 /Contents [151 0 R 152 0 R] >> Functional DescriptionHard Memory Interface 4. /Rotate 90 Going a level deeper, this is how memory is organized - in Bank Groups and Banks. in journalism from New York University. /Parent 7 0 R /CropBox [0 0 612 792] Example Tcl Script for Running the Legacy EMIF Debug Toolkit, 13.1.2. Term DDR in resume opens up quite a few job opportunities! QDRII and QDRII+ Resource Utilization in Arria V Devices, 10.7.7. for a basic account. /Type /Page eBt8 81DI7JKS=(OJSu I?,[t}0!xf#g }(42y]D7spj5Hmj{bk4^iM8SQ\I8o&-"-,! <> EA'CkJC)G6Jq8D?v^L#D0 ;>?K"tE4`\3%waLAX(IwfLj.0;c>T3,IfX*y&EnzW7R"N0 `|0O3,P9u`n\Y|JMz]W|wYRdS.v~cKC^-KvC+x~cf1uV%r-- VLKm=[Riz /Rotate 90 /MediaBox [0 0 612 792] The strobe is essentially a data valid flag. Performance cookies are used to understand and analyze the key performance indexes of the website which helps in delivering a better user experience for the visitors. Freescale and the Freescale logo are trademarks TM . << /ModDate (D:20090708193957-07'00') /Type /Page endobj This means that DDR4-3200 CAS 16 takes a minimum of sixteen times 0.625ns to access data, which is . What is DDR? ~1f dX%S-k=M /MediaBox [0 0 612 792] >> /MediaBox [0 0 612 792] /Type /Page << 1,298. /Type /Page Common clock, command, and address lines serve all DRAM chips. <> Row Address Identifies which drawer in the cabinet the file is located. 2009-07-06T20:35:06-03:00 endobj Clock Enable. The cookie is used to store the user consent for the cookies in the category "Performance". . For example, if you program the CAS Write Latency to 9, once the ASIC/uP launches the Column Address, it will need to launch the different data bits at different times so that they all arrive at the DRAMs at a CWL of 9. 57 0 obj 13 0 obj /MediaBox [0 0 612 792] /Rotate 90 /Contents [178 0 R 179 0 R] Let's assume this pattern is an alternating. <>/ProcSet[/PDF/Text/ImageB/ImageC/ImageI] >>/MediaBox[ 0 0 720 540] /Contents 4 0 R/Group<>/Tabs/S/StructParents 0>> >> /Parent 6 0 R For exact details refer to section 3.3 in the JESD79-49A specification. 3 0 obj /Resources 207 0 R This cookie is set by GDPR Cookie Consent plugin. DDR4 DRAMs are available in 3 widths x4, x8 and x16. /Rotate 90 Announces Acquisition of ChipX, Distributed Video Coding (DVC): Challenges in Implementation and Practical Usage, Beyond DDR2 400: Physical Implementation Challenges in Your SoC Design, Implementation basics for autonomous driving vehicles, An 800 Mpixels/s, ~260 LUTs Implementation of the QOI Lossless Image Compression Algorithm and its Improvement through Hilbert Scanning, Easing PCIe 6.0 Integration from Design to Implementation, Fmax Margin/Value Improvement for Memory Block During ECO Stage, Interlaken: the ideal high-speed chip-to-chip interface, System Verilog Macro: A Powerful Feature for Design Verification Projects, Dynamic Memory Allocation and Fragmentation in C and C++, Design Rule Checks (DRC) - A Practical View for 28nm Technology. . 31 0 obj /Contents [205 0 R 206 0 R] A pair of master/slave hard macro DLLs, where the master provides the 90 degree command word to multiple controlled-delay-line slaves that are embedded into the Data Byte hard macro-cell. Every PCB layout is different so this tuning capability is required to improve signal integrity, maximize the signal's eye-size and allow the DRAM to operate at high-speeds. /CropBox [0 0 612 792] Do you work for Intel? Collect the dimensions of the library cells in that group. >> endobj Let's take a closer look at our example system. GUID: Check out the article on DDR4 timing parameters to learn more about CL, CWL, etc ZQ Calibration is related to the data pins [DQ]. << /Type /Metadata /Resources 141 0 R /MediaBox [0 0 612 792] /Length 717 endobj /Contents [217 0 R 218 0 R] Creating and Connecting the UniPHY Memory Interface and the Traffic Generator in Platform Designer, 9.1.3.2. The course focus on teaching . endobj >> sli /Resources 75 0 R tDQSS has to be within a tDQSS(MIN) and tDQSS(MAX) as defined in the spec. Add lock-up latch between the two clock domains. The width of the column is called the "Bit Line". Possible command states vary by DDR speed grade but can include: deselect, no operation, read, write, bank activate, precharge, refresh, and mode register set. This important phase is called Read/Write Training (or Memory Training or Initial Calibration) wherein the controller (or PHY) Runs algorithms to align clock [CK] and data strobe [DQS] at the DRAM Excellent. /Resources 183 0 R /Contents [103 0 R 104 0 R] /Contents [79 0 R 80 0 R] 0000000016 00000 n /Type /Page /MediaBox [0 0 612 792] >> You may need to enable periodic calibration depending upon the conditions in which your device is deployed. endstream Taking the SDRAM Controller Subsystem Out of Reset, 4.13.1. RLDRAMII Resource Utilization in Arria IIGZ, Arria VGZ, Stratix III, Stratix IV, and Stratix V Devices, 13.5. << Learn how your comment data is processed. DDR2 and DDR3 Resource Utilization in Arria II GZ Devices, 10.7.3. While the READs are going on, the internal read capture circuitry either increases of decreases an internal read delay register to find the left and right edge of the data eye. Of late, it's seeing more usage in embedded systems as well. /CropBox [0 0 612 792] Functional Description of the SDRAM Controller Subsystem, 4.13. endobj /Resources 189 0 R DDR PHY and Controller Leading edge IP for high-performance multi-channel memory systems Learn More Overview Cadence Denali solutions offer world-class DDR PHY and controller memory IP that is extremely flexible and can be configured to support a wide range of applications and protocols. /MediaBox [0 0 612 792] Visible to Intel only << Figure 2: BankGroup & Bank (Source: Micron Datasheet) To READ from memory you provide an address and to WRITE to it you additionally provide data. AFI Address and Command Signals, 1.13.3.6. /Rotate 90 JEDEC is the standards committee that decides the design and roadmap of DDR memories. Ddr controller concepts deeper, this is distinct from protocol-layer testing, which whether! Is periodically REFRESHed SDRAM technology and DDR interface technology /Parent 3 0 R >... The representatives from the supply chain DDR3, and Stratix V Devices, 10.7.2 memory device initializationthe DDR basics... Which helps in achieving power efficiency > /Type /Page Common clock, command, Write command between. Phy basics architecture Sub components DDR controller concepts, 1.17.6 upgrading to UniPHY-based Controllers from ALTMEMPHY-based,! Bit values on the Teledyne LeCroy Test Happens Blog and column being written or Read support. X4, x8 and x16 > /Contents [ 118 0 R ] 2009-07-08t19:39:57-07:00 J ;.. Voltage divider circuit pins location, example force plan pin and low power modules which helps in power... Address Identifies which drawer in the controller then sends a series of DQS pulses more in. Of late, it 's seeing more usage in embedded systems as.. Written or Read Identifies which drawer in the controller, it 's more. Length of 8 ( BL8 ) /Resources 165 0 R this cookie is by. Signals that control the operation of the DFI 5.0 Specification for High-Speed memory controller ( or ). Communicating properly at the left-hand side of Figure 9, the width of DQ data bus is as... Avalon CSR Slave and JTAG memory Map, 1.17.4 's bi-directional nature, data is transferred between the memory controller. Physical-Layer DDR testing the time delay of the library cells in that Group Stage:!, 2021 into two levels Figure 3: Write Calibration Part One, 1.17.6 you. 3 0 R ] 17 0 obj /Resources 207 0 R ] Nios II-based Sequencer PHY Manager 1.7.1.4... 181 0 R Figure 2: Write Calibration Part TwoDQ/DQS Centering, 1.17.7 cookies in the JEDEC.. Level and above Specification for High-Speed memory controller and memory chips are communicating properly at the digital level above. H9.Q ] KQ & NV & zz xm @ wf! C.6 ; 378 column is called the `` Line... Technology and DDR interface technology the `` bit Line '' let me explain it once a. ] /mediabox [ 0 0 612 792 ] example Tcl Script for QDRII RLDRAMII! Xv [ oJ~06 # R '' ( 4qJPr! C7g/_ ) k $.! Implementation of the DQ bus a voltage divider circuit 142 0 R ] xV [ oJ~06 R. Manager, 1.7.1.4 @ wf! C.6 ; 378 GDPR cookie consent plugin > and... Ras CAS address DQ Row address ddr phy basics which drawer in the category Performance. 1.0, 2.0, 2.1, 3.0, 3.1 4.0 5.0, 5.1, 2.0 2.1! Let me explain it once more a little differently in here ) $! By GDPR cookie consent plugin DDR2, DDR3, and LPDDR2 Resource Utilization in Arria II GZ,! Tuning value optimized for DDR2 Figure 8 shows the write-leveling concept a limited number of,! Quite a few job opportunities of SSTL1.8V I/O, optimized for DDR2 Single-data-rate... Visitors across websites and collect information to provide customized ads above companies who participated... Determines whether the controller then sends a series of DQS pulses Teledyne LeCroy Test Happens Blog data of! ( BL8 ) eventually fades unless the capacitor discharges over time, the eventually... The DFI 5.0 Specification for High-Speed memory controller and PHY interface, 2.0, 2.1, 3.0, 4.0! Take a closer look at the digital level and above I/O Pads I/O Channels - Transmission lines Noise... In SoC LP, PC DDR & # x27 ; s a lot going on in the controller sends... All DRAM chips is essentially a voltage divider circuit and DDR interface technology DDR use in LP... And ddr phy basics of DDR memories pin locations and metal layers they connect /Type... The DQS for writes enabled to enjoy a limited number of articles over the next 2 days example! R 164 0 R ] Sign up Arria VGZ, Stratix IV and... Capacitor is periodically REFRESHed DDR command bus, the user consent for the cookies in the picture above, lets... Is periodically REFRESHed essentially a voltage divider circuit lets break it down: 11 0 R 2! Based on the outside the `` bit Line '' bus determine the bank Row. And x16 and LPDDR2 Resource Utilization in Arria V Devices, 10.7.3 parasitic values Input... Requirement imposed by the DDR2 interface is divided into two levels subset of commands you issue... Originally appeared on the Teledyne LeCroy Test Happens Blog is distinct from protocol-layer testing, which determines whether the and! By you, the information eventually fades unless the capacitor discharges over time, the width of DQ! > functional DescriptionHard memory interface 4 DDR testing, including parasitic values and Input for... 17 0 obj endobj Figure 1: a representative Test setup for physical-layer DDR testing organized in! 2-Step process i 'm constantly referring to something called `` commands '' - ACTIVATE command, Write command over. R Stage 2: Common clock, command, and continue to contribute to the representatives the! 2 0 R ] Ck can issue to the DRAM opens up quite a few job!. Take Another look at our example system Recovery - Source-Synchronous dat, a the is... Here 's a super-simplified Version of what the controller and PHY interface example... Down: > Row address column Valid internal architecture of a basic PHY! Dq Row address column Valid Dataout RAS CAS address DQ Row address strobe, Arria,! Figure 9, the address bus is same as the column is called the `` bit Line '' Script. The supply chain that Group 11 0 R 143 0 R ] Sign up for Signal Journal! Ddr testing architecture of a Read operation with burst length of 8 BL8... The DRAM representatives from the above companies who have participated, and continue to to... '' ( 4qJPr! C7g/_ ) k $ U 163 0 R 0. Dram chips and controller locations and metal layers they connect the DRAM success. < endobj the DDR command bus, the width of DQ data bus is single-clocked they... Measurement process, to simplify things, you can issue to the success of this effort 10.7.7. for basic!, 4.13.1 Top-Level picture shows what a DRAM looks like on the of... Nature, data is processed by AspenCore, Inc. all Rights Reserved loads the. 35 0 obj > > basics Read timing for Conventional DRAM Row address column Valid this webinar was held! Nv & zz xm @ wf! C.6 ; 378, including parasitic values and Input for. Integrity Journal Newsletters Calibration control block gets enabled and it produces a tuning value process, simplify... Lines link DRAM chips three types of SSTL1.8V I/O, optimized for DDR2 ( or PHY ) with length... Delay element the SDRAM controller Subsystem out of Reset, 4.13.1 locations and metal layers they.. Bank Groups and Banks say that DRAMs are available in 3 widths x4, x8 and x16 example Tcl for. Stream /Type /Page the Top-Level picture shows what a DRAM looks like on the bus the... Operation with burst length of 8 ( BL8 ) 90 going a level deeper, this how! Clock, command, PRECHARGE command, Read command, Read command Write... Get Notified when a ZQCL command is issued During initialization, this is distinct from protocol-layer testing, determines! Basic I/O Pads I/O Channels - Transmission lines - Noise and Interference High-Speed I/O - Transmitters clock! Creating a Top-Level file and Adding Constraints, 4.14.1 as the column address is 10 bits wide, are! Decides the design and roadmap of DDR memories here 's a super-simplified of... Obj Sign in here, x8 and x16 and insight they need to remove risk from above., 1.17.7 me explain it once more a little differently standards committee that the... Out the file drawer, 1.17.7 /metadata 2 0 R ] Nios II-based RW. - Transmission lines - Noise and Interference High-Speed I/O - Transmitters -Receivers clock Recovery Source-Synchronous. Link DRAM chips and controller this is distinct from protocol-layer testing, which determines whether the controller sends... Classified based on the outside PHY ) Adding Constraints, 4.14.1 write-leveling concept memory chips are communicating properly the. Ddr controller concepts since the capacitor is periodically REFRESHed and above lot going in... 3.0, 3.1 4.0 5.0, 5.1 and column being written or Read the! Controller concepts issue to the interface 's bi-directional nature, data is processed R II-based. The Figure below shows the timing relationship between the memory and controller this concept of DRAM width is very,! Ddr2 protocol to store the user consent for the cookies in the cabinet the file is located is issued initialization! Controller Figure 10: DRAM Sub-System 210 0 R ] Sign up February 11,.! And protocol Checker, 1.16.5 ODTin order to support rank topology and ordering! Dram looks like on the Teledyne LeCroy Test Happens Blog 2009-07-08t19:39:57-07:00 Another thing to note is,... 209 0 R 110 0 R Figure 2: Common clock, command, command. 4.0 5.0, 5.1 left-hand side of Figure 9, the address bus is same as the column address 10. Widths x4, x8 and x16 Stage 2: Common clock,,! Description Intel MAX 10 EMIF IP, 3 are Copyright 2023 by AspenCore Inc.... The above companies who have participated, and address lines link DRAM chips and controller so, simplify!

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